Theoretical Investigation of Base Doping and Illumination Level Effects on a Bifacial Silicon Solar Cell
F. I. Barro *
Department of Physics, Semiconductors and Solar Energy Laboratory, Faculty of Science and Technique, Cheikh Anta Diop University, BP 5005 Dakar, Senegal
M. Sané
Department of Physics, Semiconductors and Solar Energy Laboratory, Faculty of Science and Technique, Cheikh Anta Diop University, BP 5005 Dakar, Senegal.
B. Zouma
Department of Physics, Thermal and Renewable Energies Laboratory, Training and Research Unit in Pure and Applied Sciences, University of Ouagadougou, Burkina Faso
*Author to whom correspondence should be addressed.
Abstract
In this paper, we are investigating theoretically the behavior of a bifacial silicon solar cell in steady state with different illumination conditions. The bifaciality coefficient and the conversion efficiency are calculated for various rear side illumination conditions (traduced here by the illumination level) and back surface recombination velocity, taking into account the base doping density. The main purpose of the work is to show that bifacial illumination can improve significantly the conversion efficiency of the solar cell and to exhibit the role of the back surface recombination velocity, the base doping density and the rear side illumination conditions in the performance of the bifacial silicon solar cell.
Keywords: Bifaciality, doping, conversion efficiency, solar cell.